Samsung's GaN Foundry Ramp Faces Fresh Delay After Reliability Issues Emerge in Trial Production
Some test chips reportedly fail under prolonged high-temperature conditions, prompting customers to evaluate alternatives
(Source: Samsung Electronics) Samsung Electronics' next-generation gallium nitride (GaN) power semiconductor foundry project has encountered a setback during trial production, raising concerns that commercial production may be delayed beyond this year. The issue emerged after some test chips reportedly failed to operate under extended high-temperature conditions. According to multiple industry sources on July 31, Samsung has established a dedicated 8-inch GaN semiconductor foundry line at its Gi...