Superconducting properties of homoepitaxial CVD diamond
Abstract
Superconductivity was achieved above 10 K in heavily boron-doped diamond thin films deposited by the microwave plasma-assisted chemical vapor deposition (CVD) method. Advantages of the CVD method are the controllability of boron concentration in a wide range, and a high boron concentration, compared to those obtained using the high-pressure high-temperature method. The superconducting transition temperatures of homoepitaxial (111) films are determined to be 11.4 K for T C onset and 8.4 K for zero resistance from transport measurements. In contrast, the superconducting transition temperatures of (100) films T C onset = 6.3 K and T C zero = 3.2 K were significantly suppressed.
- Publication:
-
Diamond and Related Materials
- Pub Date:
- 2007
- DOI:
- Bibcode:
- 2007DRM....16..911T
- Keywords:
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- Diamond;
- Superconductivity;
- Boron;
- MIT