Abstract
Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.
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Prof. Jang-Sik Lee received his B.S., M.S., and Ph.D. degrees in materials science and engineering from Seoul National University, Seoul, Korea in 1997, 1999, and 2002, respectively. In 2002, he joined the Los Alamos National Laboratory as a director’s postdoctoral fellow. In 2004, he joined the memory division of Samsung Electronics as a senior research engineer and was in charge of the integration and device reliability of 32 gigabit flash memory devices. Since 2006, he has been with the Kookmin University, Seoul, Korea, where he is currently an assistant professor in the School of Advanced Materials Engineering. He has authored more than 80 research publications and patents. His research interests include nonvolatile memory devices (flash, SONOS, nanocrystal devices, FRAM, MRAM, PRAM, ReRAM); low-temperature poly-Si thin film transistors; nanostructured materials and devices; epitaxial thin film growth and applications. He is a member of IEEE, Materials Research Society, Electrochemical Society, and the Korean Institute of Metals and Materials. He is an editor of Electronic Materials Letters and Journal of the Korean Institute of Electrical and Electronic Material Engineers.
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Lee, JS. Recent progress in gold nanoparticle-based non-volatile memory devices. Gold Bull 43, 189–199 (2010). https://doi.org/10.1007/BF03214986
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DOI: https://doi.org/10.1007/BF03214986