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TL-DR;

Using 0.1 µF capacitor across \$V_{DS}\$ to tame ringing/overshoot, rather than adding resistor between gate and driver. Is this acceptable?


I'm learning to design a 20 kHz PWM driver for LED strip. The MOSFET is ILRB8314 which driven by TC4420.

schematic

The problem is the voltage overshoot on \$V_{DS}\$, especially on the falling edge, which I suspect come from a parasitic inductance from the LED cable, breadboard etc.

As far as I know, the common wisdom is to slow down the gate drive by adding a resistor there (or reduce the inductance - I tried my best, but it's not easy on breadboard).

But what I did instead is adding 0.1 µF C1 between drain and source - essentially a decoupling capacitor. My argument is why slow down sharp gate turn on/off edges if I can avoid it?

Is this an acceptable workaround? Is there any unintended side effect I should be aware of?

Other relevant facts:

  • \$I_{DS} \approx 0.52 A \$ @50% duty cycle.
  • \$V_{GS} \approx 5.1 V\$
  • CH1 (Yellow) is PWM at the gate: \$V_{GS}\$
  • CH2 (Blue) is the \$V_{DS}\$, note the overshoot notably on the falling edge.

overall

Overall signal

enter image description here

Rising edge

enter image description here

Falling edge

setup

Setup

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    \$\begingroup\$ Usually you'd add a small resistor in series with this capacitor (to ease the switching burden on the FET) and call it a snubber. \$\endgroup\$ Commented yesterday
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    \$\begingroup\$ On a separate note. Your probing setup looks quite "loose". So the scope is likely to pick up transients that aren't really there as a voltage on the probed node. Then again the layout itself is also rather loose, so it wouldn't be too surprising to indeed have overshoots. \$\endgroup\$ Commented yesterday
  • \$\begingroup\$ Thanks. I wouldn't be surprised too if I'm picking up ghost transients on this setup. I'll add resistor between gate and driver as per standard practice. Now I know why :) \$\endgroup\$ Commented yesterday

1 Answer 1

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First, you can't trust any high speed measurement done on a breadboard, especially with the scope probe having the long ground wire with alligator clip attached. The ground wire not only adds inductance which causes ringing and artifacts, it also makes a 1-turn transformer secondary with the primary being anything in the vicinity. You can experiment by clipping the ground on the probe tip, which turns it into a loop antenna, and hovering it above your circuit while it switches, without actually touching anything with the probe. See what you get on the scope display: in theory, you should get a flat line...

Now the scope traces:

When turning the MOSFET on, the driver injects current into the gate to rise gate voltage. However, the MOSFET has substantial capacitance between G and D. Therefore, some of that gate pulse goes through Cgd and couples into the drain. This results in an upward drain voltage spike at turn-on, which is visible on your "Rising edge" shots. This is normal.

When turning the MOSFET off, gate voltage goes in the other direction, so the same occurs, and you get a downward voltage spike on the drain. This is also normal, and it is visible on both "Falling edge" scope shots, although the vertical scale is different which makes it less conspicuous on the left, but it's there.

If the load is inductive, then the energy stored in that inductor will have to dissipate. The usual fix is to add a freewheeling diode to the supply rail, which should switch fast, so a Schottky diode. Otherwise, the stored energy will end up as heat, either due to damped oscillations, the MOSFET limiting voltage via avalanche, or the MOSFET catching it by switching slowly. This energy is lost on each cycle, which adds losses:

\$ P_{lossL} = F_{req} . \frac{1}{2} L I² = 25mW \$ for 10µH inductance and 0.5A current, so a 0.4% efficiency penalty for driving a 6W LED. Not really an issue.

If you add a cap aross the FET D-S then the energy stored in the inductor will end up charging the cap. On the "Falling edge" scope shot we can see some oscillations as the cable inductance and the 100nF cap ring. The oscillations are damped so the energy is lost. If you don't want to have damped oscillations you can use a R-C snubber instead. Then the 100nF cap charges to about 3V, because it sits between the LEDs and ground.

On the next turn-on the MOSFET will short the cap, and dissipate as heat all the energy stored in it.

\$ P_{lossC} = F_{req} . \frac{1}{2} C (V_1-V_2)² = 9mW \$ or 0.15% efficiency penalty. Okay, that's not catastrophic either.

A more pressing issue is that if you drive LEDs at the end of a long cable, and your driver can switch the MOSFET in 10ns, then that'll generously spread harmonics all over the spectrum over hundreds of MHz and end up making a wideband radio jammer. Try using an AM or FM radio in the vicinity, tuned to a multiple of your PWM frequency.

The fix for that is to switch the MOSFET slowly, 1µs or so. For this kind of application, I use a 74HCT buffer chip as the MOSFET driver. It translates ESP32's 3V3 output to 5V which is more convenient to drive a MOSFET, and its output current is very wimpy which limits MOSFET switching to a more civilized speed, say 1µs or so. If you use a 5V MCU you can drive the FET directly with a PWM GPIO and a gate resistor, say 1kOhm. Observe switching speed on the scope and adjust accordingly.

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    \$\begingroup\$ Thank you for your answer. I learned alot today especially with the unintended consequences being a radio jammer! I'll experiment with freewheeling diode and R-C snubber, just to satisfy my curiosity. I'll just put the gate resistor as per your recommendation. Unfortunately, with ESP32, driving the MOSFET with 3.3V has too much RDS_on to my liking (FET was quite warm to touch) \$\endgroup\$ Commented yesterday
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    \$\begingroup\$ Yes 3.3V is a bit low. There are FETs that will work but not this one. If you want to control RGB LEDs you can use chips like 74HCT241, you get 8 channels of 3.3 to 5V conversion at very low cost \$\endgroup\$ Commented yesterday

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