As power systems evolve, engineers are being pushed to deliver higher efficiency, better thermal performance, and greater power density - whether in 800 V EV platforms, industrial automation, or renewable energy systems. Wide-bandgap technologies like SiC and GaN are enabling major gains, but choosing the right device for the application isn’t always straightforward. At Nexperia, our portfolio spans silicon IGBTs, SiC Schottky diodes, 1200 V SiC MOSFETs, and GaN FETs - helping engineers balance efficiency, thermal behaviour, size, and cost with confidence. This guide explores the practical trade-offs and application strengths of each technology. #WideBandgap #PowerElectronics #SiC #GaN #Nexperia
Electrification, automation, and digital infrastructure are placing increasing demands on modern power systems. From 800 V EV architectures to renewable-energy systems requiring high efficiency under partial loads, designers must constantly balance efficiency, thermal performance, and system size. While silicon has long been the standard for power design, wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) enable faster switching, lower losses, and higher-temperature operation. However, selecting the right technology for a given application remains a challenge. Nexperia addresses this with a broad portfolio spanning silicon IGBTs, SiC Schottky diodes, SiC MOSFETs up to 1200 V, and GaN FETs. This guide helps designers connect device-level characteristics to real application needs and select the most suitable WBG solution. Learn more: https://wevlv.co/4ahtP99 #electronics #engineering #technology